MTP2P50E |
RFQ for MTP2P50E Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| MTP2P50E | - | TO-220 | 05+ |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies,converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
500 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
500 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±20 ±40 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse(tp10 s) |
ID ID IDM |
2.0 1.6 6.0 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
75 0.6 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL =4.0 Apk, L = 10 mH, RG = 25) |
EAS
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